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Q.Dot™ InAs quantum dot n-type ink

Quantum Solutions provides the Q.Dot™ InAs quantum dot n-type ink (n-ink), specifically designed for the fabrication of highly efficient SWIR (short-wave infrared) photodiodes and image sensors. The n-ink is negatively doped, meaning the work function of thin films is close to the conduction band of the material. Q.Dot™ InAs quantum dot n-ink offers multiple advantages. Firstly, it eliminates the need for complex solid ligand exchange procedures. Secondly, it enables the straightforward creation of a thick and smooth quantum dot absorber layer, up to 100 nm, which can be effortlessly deposited onto a substrate using spin-coating or other solution processing methods. Multiple layer deposition is possible to achieve the desired thickness of 200–400 nm. Furthermore, Q.Dot™ InAs quantum dot n-ink delivers exceptional cost-efficiency, with only 5 mL required to coat one layer on a large 200 mm wafer, making it an ideal choice for scaling up production processes in SWIR photodiodes and image sensors.

Description

Quantum Solutions offers a range of materials for fabricating the Q.Dot™ photodiode stack, which can be used in sensing and imaging applications. The principal device structure comprises several thin layers, referred to as the Q.Dot™ stack, placed on top of a substrate. Working from the bottom up, the structure includes a bottom electrode, HTL (hole transporting layer), quantum dots absorber, ETL (electron transporting layer), and transparent top electrode.

Q.Dot™ stack materials, including HTL, quantum dots, and ETL, can be deposited from solution onto any target substrate, such as glass, silicon, or a ROIC platform, using spin-coating methods. These novel solution-based methods for manufacturing thin films of compound semiconductor materials have made it possible to create artificial nanocrystalline structures that offer unprecedented possibilities. Unlike epitaxial layers, the quality of quantum-dot semiconductors is less dependent on the crystallographic characteristics of substrates and their interfacial relationships. Solution-based methods provide flexibility and broad material choice for specialised carrier transport layers enabling tuneable photodiode functions.

Quantum Solutions provides the Q.Dot™ InAs quantum dot n-type ink (n-ink), specifically designed for the fabrication of highly efficient SWIR (short-wave infrared) photodiodes and image sensors. The n-ink is negatively doped, which means the work function of thin films is close to the conduction band of the material. Q.Dot™ InAs quantum dot n-ink provides several advantages. Firstly, it eliminates the need for complex solid ligand exchange procedures. Secondly, it enables the straightforward creation of a thick and smooth quantum dot absorber layer, up to 100 nm. This layer can be effortlessly deposited onto a substrate using techniques such as spin-coating or other solution processing methods. Multiple layer deposition is possible to achieve the desired thickness of 200–400 nm. Furthermore, Q.Dot™ InAs quantum dot n-ink offers exceptional cost-efficiency in terms of ink consumption. Only 5 mL of this ink are required to coat one layer on a large 200 mm wafer, making it a practical choice for scaling up production processes in the field of SWIR photodiodes and image sensors.

Q.Dot™ InAs Quantum Dot n-type ink offers the following features:

Efficient solution-processed photoelectric absorber nanomaterial for use in short-wave infrared (SWIR) photodetectors and image sensors.
Simple one-step deposition on substrates (CMOS wafers, silicon, or glass wafers) by spin-coating processes, forming a thick (80–100 nm) quantum dot absorber layer. No ligand exchange process required. Multiple layers deposition is possible to achieve the desired thickness of 200–400 nm.
Extremely economical material consumption, with 5 mL being sufficient for coating one layer on a large 200 mm wafer.
A wide range of product availability from 3 to 8.5 nm of quantum dot size, covering the absorbance cut-off from 900 nm to 1750 nm.
Narrow particle size distribution (STDV < 5–10%) for the formation of a compact and defect-free quantum dot absorber layer.

Click here to view the Technical Specification for detailed information.

Q.Dot™ is a trademark of QUANTUM SOLUTIONS. Contact us to make any requests and questions or buy products online

Technical Data

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Technical Data Sheet

Application notes

Q.Dot™ InAs Quantum Dot n-type ink offers the following features:

Efficient solution-processed photoelectric absorber nanomaterial for use in short-wave infrared (SWIR) photodetectors and image sensors.
Simple one-step deposition on substrates (CMOS wafers, silicon, or glass wafers) by spin-coating processes, forming a thick (80–100 nm) quantum dot absorber layer. No ligand exchange process required. Multiple layer deposition is possible to achieve the desired thickness of 200–400 nm.
Extremely economical material consumption, with 5 mL being sufficient for coating one layer on a large 200 mm wafer.
A wide range of product availability from 3 to 8.5 nm of quantum dot size, covering the absorbance cut-off from 900 nm to 1750 nm.
Narrow particle size distribution (STDV < 5–10%) for the formation of a compact and defect-free quantum dot absorber layer.

General specification

Appearance	Black liquid
Deposition method*	Spin-coating (drop casting, dip coating, die coating, spray coating, inkjet printing)
Thin film thickness at 1000 rpm spin-coating	80 - 120 nm (depending on the particles size)
Consumption	10 – 20 μL/cm² (5 mL is sufficient for one layer in a 200 mm wafer)

*A detailed manual for the spin-coating process will be provided upon purchasing the product.

Specification of Q.Dot™ InAs quantum dot n-type ink

Q.Dot™ Catalogue Number	Core type	Core size	Absorption peak in SWIR range	Absorbance range	Bandgap	Doping polarity**	Solid content
InAs-900-abs n-ink	InAs	3.0 nm	900 +/- 25 nm	600–1050 nm	1.26 eV	n	50 mg/mL
InAs-1000-abs n-ink	InAs	4.5 nm	1000 +/- 25 nm	600–1150 nm	1.15 eV	n	50 mg/mL
InAs-1100-abs n-ink	InAs	5.5 nm	1100 +/- 25 nm	600–1250 nm	1.05 eV	n	50 mg/mL
InAs-1200-abs n-ink	InAs	6.5 nm	1200 +/- 25 nm	600–1350 nm	0.96 eV	n	50 mg/mL
InAs-1300-abs n-ink	InAs	7.0 nm	1300 +/- 25 nm	600–1550 nm	0.88 eV	n	50 mg/mL
InAs-1400-abs n-ink	InAs	7.5 nm	1400 +/- 25 nm	600–1650 nm	0.82 eV	n	50 mg/mL
InAs-1500-abs n-ink	InAs	8.5 nm	1500 +/- 25 nm	600–1750 nm	0.73 eV	n	50 mg/mL

**Detailed energy levels can be provided upon purchasing the product.

Notes for handling

Shelf Life 12 months. Shipping and storage temperature 4-25 °C. Store in DARK conditions, in original packaging or in airtight, sealed packaging inside a glovebox. Repackage in a glovebox only. Avoid contact with air. Process inside the glovebox or another enclosed inert gas environment.

Catalog Number	Description	Quantity	Price
Q.Dot™ InAs-900-abs n-ink	InAs quantum dots, n-type ink, 900 nm absorption peak, 50 mg/mL	5 mL	$3000
Q.Dot™ InAs-1000-abs n-ink	InAs quantum dots, n-type ink, 1000 nm absorption peak, 50 mg/mL	5 mL	$3000
Q.Dot™ InAs-1100-abs n-ink	InAs quantum dots, n-type ink, 1100 nm absorption peak, 50 mg/mL	5 mL	$3000
Q.Dot™ InAs-1200-abs n-ink	InAs quantum dots, n-type ink, 1200 nm absorption peak, 50 mg/mL	5 mL	$3000
Q.Dot™ InAs-1300-abs n-ink	InAs quantum dots, n-type ink, 1300 nm absorption peak, 50 mg/mL	5 mL	$3000
Q.Dot™ InAs-1400-abs n-ink	InAs quantum dots, n-type ink, 1400 nm absorption peak, 50 mg/mL	5 mL	$3000
Q.Dot™ InAs-1500-abs n-ink	InAs quantum dots, n-type ink, 1500 nm absorption peak, 50 mg/mL	5 mL	$3000
Q.Dot™ InAs-900-abs n-ink	InAs quantum dots, n-type ink, 900 nm absorption peak, 50 mg/mL	10 mL	$5000
Q.Dot™ InAs-1000-abs n-ink	InAs quantum dots, n-type ink, 1000 nm absorption peak, 50 mg/mL	10 mL	$5000
Q.Dot™ InAs-1100-abs n-ink	InAs quantum dots, n-type ink, 1100 nm absorption peak, 50 mg/mL	10 mL	$5000
Q.Dot™ InAs-1200-abs n-ink	InAs quantum dots, n-type ink, 1200 nm absorption peak, 50 mg/mL	10 mL	$5000
Q.Dot™ InAs-1300-abs n-ink	InAs quantum dots, n-type ink, 1300 nm absorption peak, 50 mg/mL	10 mL	$5000
Q.Dot™ InAs-1400-abs n-ink	InAs quantum dots, n-type ink, 1400 nm absorption peak, 50 mg/mL	10 mL	$5000
Q.Dot™ InAs-1500-abs n-ink	InAs quantum dots, n-type ink, 1500 nm absorption peak, 50 mg/mL	10 mL	$5000