QDot™ materials for UV Sensors

Applications / QDot™ materials for UV Sensors

Silicon photodiode is the most widely used commercial photodetector for a broad range of applications, from imaging to light sensors. Unfortunately, it has low responsivity and struggles to capture photons in the UV light range (< 400 nm), due to the low penetration depth of high energy UV photons into silicon-based materials. QDot™ Perovskite Quantum Dots can be utilised as a colour-converting layer to enhance the UV light sensitivity of Si-based photodetectors.

Technical data

Benefits of using QDot™ Perovskite Quantum Dots for UV sensors:

  • High photo-conversion of UV light into visible light (PLQY up to 100 %)
  • High absorption coefficient of UV light
  • Tunable emission 410-685 nm
QDot™ Perovskite QDs UV sensor architecture
QDot™ Perovskite QDs absorption and emission spectra
Typical value
QDs peak emission
Tuneable 410-685 nm
PLQY at UV light excitation
Up to 100 %
UV light absorption range
100-400 nm
PL decay time (372 nm)
4.5 ns
Responsivity improvement of Si-PD with QDot™ Perovskite QDs
100 – 1000 times


QDot™ Perovskite QDs can convert UV light into lower energy green light where Si-based photodetectors have a high sensitivity. QDot™ Perovskite QDs ABX3-510 can be used in the form of QDs in a polymer film or a spin coated layer on top of the Si-based photodetector.

By utilising only a very thin layer of QDot™ Perovskite QDs on top of Si-based photodetector, the responsivity of the devices increases in response to UV light, without sacrificing the response to the visible light.

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